Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels

A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)). We overcame th...

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Detalles Bibliográficos
Autores principales: Van, Ngoc Huynh, Lee, Jae-Hyun, Whang, Dongmok, Kang, Dae Joon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Berlin Heidelberg 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223970/
https://www.ncbi.nlm.nih.gov/pubmed/30464954
http://dx.doi.org/10.1007/s40820-014-0016-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223970/
https://www.ncbi.nlm.nih.gov/pubmed/30464954
http://dx.doi.org/10.1007/s40820-014-0016-2

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