Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels

A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)). We overcame th...

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Autores principales: Van, Ngoc Huynh, Lee, Jae-Hyun, Whang, Dongmok, Kang, Dae Joon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Berlin Heidelberg 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223970/
https://www.ncbi.nlm.nih.gov/pubmed/30464954
http://dx.doi.org/10.1007/s40820-014-0016-2
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author Van, Ngoc Huynh
Lee, Jae-Hyun
Whang, Dongmok
Kang, Dae Joon
author_facet Van, Ngoc Huynh
Lee, Jae-Hyun
Whang, Dongmok
Kang, Dae Joon
author_sort Van, Ngoc Huynh
collection PubMed
description A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)). We overcame the interfacial layer problem by incorporating P(VDF-TrFE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 10(5), a long retention time greater than 3 × 10(4) s, and a high endurance of over 10(5) programming cycles while maintaining an I(ON)/I(OFF) ratio higher than 10(2).
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spelling pubmed-62239702018-11-19 Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels Van, Ngoc Huynh Lee, Jae-Hyun Whang, Dongmok Kang, Dae Joon Nanomicro Lett Article A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)). We overcame the interfacial layer problem by incorporating P(VDF-TrFE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 10(5), a long retention time greater than 3 × 10(4) s, and a high endurance of over 10(5) programming cycles while maintaining an I(ON)/I(OFF) ratio higher than 10(2). Springer Berlin Heidelberg 2014-10-23 /pmc/articles/PMC6223970/ /pubmed/30464954 http://dx.doi.org/10.1007/s40820-014-0016-2 Text en © The Author(s) 2014 https://creativecommons.org/licenses/by/4.0/ Open AccessThis article is distributed under the terms of the Creative Commons Attribution License which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited.
spellingShingle Article
Van, Ngoc Huynh
Lee, Jae-Hyun
Whang, Dongmok
Kang, Dae Joon
Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels
title Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels
title_full Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels
title_fullStr Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels
title_full_unstemmed Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels
title_short Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels
title_sort low-programmable-voltage nonvolatile memory devices based on omega-shaped gate organic ferroelectric p(vdf-trfe) field effect transistors using p-type silicon nanowire channels
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223970/
https://www.ncbi.nlm.nih.gov/pubmed/30464954
http://dx.doi.org/10.1007/s40820-014-0016-2
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