Breakdown-induced conductive channel for III-nitride light-emitting devices

III-nitride semiconductor-based light-emitting diodes (LEDs) have superior physical properties(,) such as high thermal stability and brightness, for application to solid-state lighting sources. With the commercialization of GaN-based LEDs, improving LED reliability is important because they can be a...

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Detalles Bibliográficos
Autores principales: Han, Sang-Hyun, Baek, Seung-Hye, Lee, Hyun-Jin, Kim, Hyunsoo, Lee, Sung-Nam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6224508/
https://www.ncbi.nlm.nih.gov/pubmed/30410097
http://dx.doi.org/10.1038/s41598-018-34869-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6224508/
https://www.ncbi.nlm.nih.gov/pubmed/30410097
http://dx.doi.org/10.1038/s41598-018-34869-8

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