Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O(2) Plasma

[Image: see text] Atomic layer etching (ALE) provides Ångström-level control over material removal and holds potential for addressing the challenges in nanomanufacturing faced by conventional etching techniques. Recent research has led to the development of two main classes of ALE: ion-driven plasma...

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Detalles Bibliográficos
Autores principales: Mameli, A., Verheijen, M. A., Mackus, A. J. M., Kessels, W. M. M., Roozeboom, F.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6225338/
https://www.ncbi.nlm.nih.gov/pubmed/30286289
http://dx.doi.org/10.1021/acsami.8b12767

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6225338/
https://www.ncbi.nlm.nih.gov/pubmed/30286289
http://dx.doi.org/10.1021/acsami.8b12767

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