Cargando…
Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O(2) Plasma
[Image: see text] Atomic layer etching (ALE) provides Ångström-level control over material removal and holds potential for addressing the challenges in nanomanufacturing faced by conventional etching techniques. Recent research has led to the development of two main classes of ALE: ion-driven plasma...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American
Chemical Society
2018
|
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6225338/ https://www.ncbi.nlm.nih.gov/pubmed/30286289 http://dx.doi.org/10.1021/acsami.8b12767 |