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Nanoscale Investigation of Defects and Oxidation of HfSe(2)
[Image: see text] HfSe(2) is a very good candidate for a transition metal dichalcogenide-based field-effect transistor owing to its moderate band gap of about 1 eV and its high-κ dielectric native oxide. Unfortunately, the experimentally determined charge carrier mobility is about 3 orders of magnit...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical
Society
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6231157/ https://www.ncbi.nlm.nih.gov/pubmed/30450151 http://dx.doi.org/10.1021/acs.jpcc.8b08713 |