Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device applications. Zinc oxide (ZnO), a semiconductor with a wide bandgap (3.4 eV) and high electron saturation velocity has gained a great deal of attentio...

Descripción completa

Detalles Bibliográficos
Autores principales: Ding, Kai, Avrutin, Vitaliy, Izioumskaia, Natalia, Ullah, Md Barkat, Özgür, Ümit, Morkoç, Hadis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MyJove Corporation 2018
Materias:
Engineering
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6235586/
https://www.ncbi.nlm.nih.gov/pubmed/30417860
http://dx.doi.org/10.3791/58113

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6235586/
https://www.ncbi.nlm.nih.gov/pubmed/30417860
http://dx.doi.org/10.3791/58113

Ejemplares similares