Cargando…
Controlled compensation via non-equilibrium electrons in ZnO
Doping wide-band-gap semiconductor with impurities always accompanied spontaneous compensation of opposite charged intrinsic defects, which lead to invalid control of the type of free carriers. We demonstrate an effectual route to overcoming such detrimental defects formation during doping by suppre...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6242994/ https://www.ncbi.nlm.nih.gov/pubmed/30451926 http://dx.doi.org/10.1038/s41598-018-35178-w |