Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of GaAs potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/GaAs heterostructures. The experimental samples were grown by ion-be...

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Detalles Bibliográficos
Autores principales: Pashchenko, Alexander S, Lunin, Leonid S, Danilina, Eleonora M, Chebotarev, Sergei N
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2018
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6244215/
https://www.ncbi.nlm.nih.gov/pubmed/30498652
http://dx.doi.org/10.3762/bjnano.9.261

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6244215/
https://www.ncbi.nlm.nih.gov/pubmed/30498652
http://dx.doi.org/10.3762/bjnano.9.261

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