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Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition
This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of GaAs potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/GaAs heterostructures. The experimental samples were grown by ion-be...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6244215/ https://www.ncbi.nlm.nih.gov/pubmed/30498652 http://dx.doi.org/10.3762/bjnano.9.261 |