Site-controlled formation of single Si nanocrystals in a buried SiO(2) matrix using ion beam mixing

For future nanoelectronic devices – such as room-temperature single electron transistors – the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si(+) or Ne(+) ion beam mixing of Si into a bur...

Descripción completa

Detalles Bibliográficos
Autores principales: Xu, Xiaomo, Prüfer, Thomas, Wolf, Daniel, Engelmann, Hans-Jürgen, Bischoff, Lothar, Hübner, René, Heinig, Karl-Heinz, Möller, Wolfhard, Facsko, Stefan, von Borany, Johannes, Hlawacek, Gregor
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2018
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6244365/
https://www.ncbi.nlm.nih.gov/pubmed/30498658
http://dx.doi.org/10.3762/bjnano.9.267

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6244365/
https://www.ncbi.nlm.nih.gov/pubmed/30498658
http://dx.doi.org/10.3762/bjnano.9.267

Ejemplares similares