Theoretical Study on Carrier Mobility of Hydrogenated Graphene/Hexagonal Boron-Nitride Heterobilayer

Hydrogenated graphene (HG)/hexagonal boron nitride (h-BN) heterobilayer is an ideal structure for the high-performance field effect transistor. In this paper, the carrier mobilities of HG/h-BN heterobilayer are investigated based on the first-principles calculations by considering the influence of s...

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Detalles Bibliográficos
Autores principales: Ye, Zhenqiang, Geng, Hua, Zheng, Xiaoping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6250606/
https://www.ncbi.nlm.nih.gov/pubmed/30467605
http://dx.doi.org/10.1186/s11671-018-2780-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6250606/
https://www.ncbi.nlm.nih.gov/pubmed/30467605
http://dx.doi.org/10.1186/s11671-018-2780-2

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