Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions

This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier Φ(B) of ~673 meV is extrapol...

Descripción completa

Detalles Bibliográficos
Autores principales: Gioffré, Mariano, Coppola, Giuseppe, Iodice, Mario, Casalino, Maurizio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6263675/
https://www.ncbi.nlm.nih.gov/pubmed/30400282
http://dx.doi.org/10.3390/s18113755

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6263675/
https://www.ncbi.nlm.nih.gov/pubmed/30400282
http://dx.doi.org/10.3390/s18113755

Ejemplares similares