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Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions
This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier Φ(B) of ~673 meV is extrapol...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6263675/ https://www.ncbi.nlm.nih.gov/pubmed/30400282 http://dx.doi.org/10.3390/s18113755 |