Electrical Characteristics and pH Response of a Parylene-H Sensing Membrane in a Si-Nanonet Ion-Sensitive Field-Effect Transistor

We report the electrical characteristics and pH responses of a Si-nanonet ion-sensitive field-effect transistor with ultra-thin parylene-H as a gate sensing membrane. The fabricated device shows excellent DC characteristics: a low subthreshold swing of 85 mV/dec, a high current on/off ratio of ~10(7...

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Detalles Bibliográficos
Autores principales: Jin, Bo, Lee, Ga-Yeon, Park, ChanOh, Kim, Donghoon, Choi, Wonyeong, Yoo, Jae-Woo, Pyun, Jae-Chul, Lee, Jeong-Soo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6264099/
https://www.ncbi.nlm.nih.gov/pubmed/30424510
http://dx.doi.org/10.3390/s18113892

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6264099/
https://www.ncbi.nlm.nih.gov/pubmed/30424510
http://dx.doi.org/10.3390/s18113892

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