Influence of Oxygen Vacancy Behaviors in Cooling Process on Semiconductor Gas Sensors: A Numerical Analysis †

The influence of oxygen vacancy behaviors during a cooling process in semiconductor gas sensors is discussed by the numerical analysis method based on the gradient-distributed oxygen vacancy model. A diffusion equation is established to describe the behaviors of oxygen vacancies, which follows the e...

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Detalles Bibliográficos
Autores principales: Liu, Jianqiao, Wang, Wanqiu, Zhai, Zhaoxia, Jin, Guohua, Chen, Yuzhen, Hong, Wusong, Wu, Liting, Gao, Fengjiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6264112/
https://www.ncbi.nlm.nih.gov/pubmed/30441788
http://dx.doi.org/10.3390/s18113929

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6264112/
https://www.ncbi.nlm.nih.gov/pubmed/30441788
http://dx.doi.org/10.3390/s18113929

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