InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions

InGaAs-based bow-tie diodes for the terahertz (THz) range are found to be well suited for development of compact THz imaging systems. To further optimize design for sensitive and broadband THz detection, one of the major challenges remains: to understand the noise origin, influence of growth conditi...

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Detalles Bibliográficos
Autores principales: Palenskis, Vilius, Minkevičius, Linas, Matukas, Jonas, Jokubauskis, Domas, Pralgauskaitė, Sandra, Seliuta, Dalius, Čechavičius, Bronislovas, Butkutė, Renata, Valušis, Gintaras
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6264118/
https://www.ncbi.nlm.nih.gov/pubmed/30400312
http://dx.doi.org/10.3390/s18113760

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6264118/
https://www.ncbi.nlm.nih.gov/pubmed/30400312
http://dx.doi.org/10.3390/s18113760

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