An Improved UU-MESFET with High Power Added Efficiency

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, a...

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Detalles Bibliográficos
Autores principales: Jia, Hujun, Hu, Mei, Zhu, Shunwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6265676/
https://www.ncbi.nlm.nih.gov/pubmed/30400602
http://dx.doi.org/10.3390/mi9110573

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6265676/
https://www.ncbi.nlm.nih.gov/pubmed/30400602
http://dx.doi.org/10.3390/mi9110573

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