A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications

These days, the demand on electronic systems operating at high temperature is increasing owing to bursting interest in applications adaptable to harsh environments on earth, as well as in the unpaved spaces in the universe. However, research on memory technologies suitable to high-temperature condit...

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Detalles Bibliográficos
Autores principales: Kim, Myeongsun, Ha, Jongmin, Kwon, Ikhyeon, Han, Jae-Hee, Cho, Seongjae, Cho, Il Hwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6265873/
https://www.ncbi.nlm.nih.gov/pubmed/30405029
http://dx.doi.org/10.3390/mi9110581

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6265873/
https://www.ncbi.nlm.nih.gov/pubmed/30405029
http://dx.doi.org/10.3390/mi9110581

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