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Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs
The effect brought by the I–V kink effect on large signal performance of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated in this paper. An improved compact model was proposed to accurately characterize the I–V kink effect. The bias dependence of the I–V kink effect has also bee...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6265932/ https://www.ncbi.nlm.nih.gov/pubmed/30400572 http://dx.doi.org/10.3390/mi9110571 |