Improvements on the Interfacial Properties of High-k/Ge MIS Structures by Inserting a La(2)O(3) Passivation Layer

In this paper, the impact of La(2)O(3) passivation layers on the interfacial properties of Ge-based metal-insulator-semiconductor (MIS) structures was investigated. It was proven that the formation of a thermodynamically stable LaGeO(x) component by incorporating a La(2)O(3) interlayer could effecti...

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Detalles Bibliográficos
Autores principales: Zhao, Lu, Liu, Hongxia, Wang, Xing, Wang, Yongte, Wang, Shulong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Letter
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266057/
https://www.ncbi.nlm.nih.gov/pubmed/30463395
http://dx.doi.org/10.3390/ma11112333

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266057/
https://www.ncbi.nlm.nih.gov/pubmed/30463395
http://dx.doi.org/10.3390/ma11112333

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