Investigation of the Electrical Characteristics of Bilayer ZnO/In(2)O(3) Thin-Film Transistors Fabricated by Solution Processing

Metal-oxide thin-film transistors (TFTs) have been developed as promising candidates for use in various electronic and optoelectronic applications. In this study, we fabricated bilayer zinc oxide (ZnO)/indium oxide (In(2)O(3)) TFTs by using the sol-gel solution process, and investigated the structur...

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Detalles Bibliográficos
Autores principales: Lee, Hyeonju, Zhang, Xue, Kim, Jung Won, Kim, Eui-Jik, Park, Jaehoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266193/
https://www.ncbi.nlm.nih.gov/pubmed/30373128
http://dx.doi.org/10.3390/ma11112103

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266193/
https://www.ncbi.nlm.nih.gov/pubmed/30373128
http://dx.doi.org/10.3390/ma11112103

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