Strain Conditions for the Inverse Heusler Type Fully Compensated Spin-Gapless Semiconductor Ti(2)MnAl: A First-Principles Study

In this work, we systematically studied the structural, electronic, magnetic, mechanical and thermodynamic properties of the fully compensated spin-gapless inverse Heusler Ti(2)MnAl compound under pressure strain condition by applying the first-principles calculation based on density functional theo...

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Detalles Bibliográficos
Autores principales: Yang, Tie, Hao, Liyu, Khenata, Rabah, Wang, Xiaotian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266302/
https://www.ncbi.nlm.nih.gov/pubmed/30366417
http://dx.doi.org/10.3390/ma11112091

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266302/
https://www.ncbi.nlm.nih.gov/pubmed/30366417
http://dx.doi.org/10.3390/ma11112091

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