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Strain Conditions for the Inverse Heusler Type Fully Compensated Spin-Gapless Semiconductor Ti(2)MnAl: A First-Principles Study

In this work, we systematically studied the structural, electronic, magnetic, mechanical and thermodynamic properties of the fully compensated spin-gapless inverse Heusler Ti(2)MnAl compound under pressure strain condition by applying the first-principles calculation based on density functional theo...

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Detalles Bibliográficos
Autores principales:	Yang, Tie, Hao, Liyu, Khenata, Rabah, Wang, Xiaotian
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266302/ https://www.ncbi.nlm.nih.gov/pubmed/30366417 http://dx.doi.org/10.3390/ma11112091

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