Synthesis of Ge(1−x)Sn(x) Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates

In this work, nanocrystalline Ge(1−x)Sn(x) alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate. This was followed by annealing the layers by rapid thermal annealing, at temperatures of 300 °C, 350 °C,...

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Detalles Bibliográficos
Autores principales: Mahmodi, Hadi, Hashim, Md Roslan, Soga, Tetsuo, Alrokayan, Salman, Khan, Haseeb A., Rusop, Mohamad
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266654/
https://www.ncbi.nlm.nih.gov/pubmed/30424494
http://dx.doi.org/10.3390/ma11112248

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266654/
https://www.ncbi.nlm.nih.gov/pubmed/30424494
http://dx.doi.org/10.3390/ma11112248

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