Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors

Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO(2) or Al(2)O(3) films with different thicknesses were used to passiv...

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Detalles Bibliográficos
Autores principales: Zhou, Yan, Dong, Chengyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266832/
https://www.ncbi.nlm.nih.gov/pubmed/30453615
http://dx.doi.org/10.3390/mi9110603

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266832/
https://www.ncbi.nlm.nih.gov/pubmed/30453615
http://dx.doi.org/10.3390/mi9110603

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