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Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors

Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO(2) or Al(2)O(3) films with different thicknesses were used to passiv...

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Detalles Bibliográficos
Autores principales: Zhou, Yan, Dong, Chengyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266832/
https://www.ncbi.nlm.nih.gov/pubmed/30453615
http://dx.doi.org/10.3390/mi9110603
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author Zhou, Yan
Dong, Chengyuan
author_facet Zhou, Yan
Dong, Chengyuan
author_sort Zhou, Yan
collection PubMed
description Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO(2) or Al(2)O(3) films with different thicknesses were used to passivate the a-IGZO TFTs, making the devices more stable during PGBS tests. With the increase in PV layer thickness, the PGBS stability of a-IGZO TFTs improved due to the stronger barrier effect of the PV layers. When the PV layer thickness was larger than the characteristic length, nearly no threshold voltage shift occurred, indicating that the ambient atmosphere effect rather than the charge trapping dominated the PGBS instability of a-IGZO TFTs in this study. The SiO(2) PV layers showed a better improvement effect than the Al(2)O(3) because the former had a smaller characteristic length (~5 nm) than that of the Al(2)O(3) PV layers (~10 nm).
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spelling pubmed-62668322018-12-06 Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors Zhou, Yan Dong, Chengyuan Micromachines (Basel) Article Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO(2) or Al(2)O(3) films with different thicknesses were used to passivate the a-IGZO TFTs, making the devices more stable during PGBS tests. With the increase in PV layer thickness, the PGBS stability of a-IGZO TFTs improved due to the stronger barrier effect of the PV layers. When the PV layer thickness was larger than the characteristic length, nearly no threshold voltage shift occurred, indicating that the ambient atmosphere effect rather than the charge trapping dominated the PGBS instability of a-IGZO TFTs in this study. The SiO(2) PV layers showed a better improvement effect than the Al(2)O(3) because the former had a smaller characteristic length (~5 nm) than that of the Al(2)O(3) PV layers (~10 nm). MDPI 2018-11-17 /pmc/articles/PMC6266832/ /pubmed/30453615 http://dx.doi.org/10.3390/mi9110603 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zhou, Yan
Dong, Chengyuan
Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
title Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
title_full Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
title_fullStr Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
title_full_unstemmed Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
title_short Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
title_sort influence of passivation layers on positive gate bias-stress stability of amorphous ingazno thin-film transistors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266832/
https://www.ncbi.nlm.nih.gov/pubmed/30453615
http://dx.doi.org/10.3390/mi9110603
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