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Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO(2) or Al(2)O(3) films with different thicknesses were used to passiv...
Autores principales: | Zhou, Yan, Dong, Chengyuan |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266832/ https://www.ncbi.nlm.nih.gov/pubmed/30453615 http://dx.doi.org/10.3390/mi9110603 |
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