AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The max...

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Detalles Bibliográficos
Autores principales: Wojtasiak, Wojciech, Góralczyk, Marcin, Gryglewski, Daniel, Zając, Marcin, Kucharski, Robert, Prystawko, Paweł, Piotrowska, Anna, Ekielski, Marek, Kamińska, Eliana, Taube, Andrzej, Wzorek, Marek
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266852/
https://www.ncbi.nlm.nih.gov/pubmed/30715045
http://dx.doi.org/10.3390/mi9110546

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266852/
https://www.ncbi.nlm.nih.gov/pubmed/30715045
http://dx.doi.org/10.3390/mi9110546

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