Vertical WS(2)/SnS(2) van der Waals Heterostructure for Tunneling Transistors

Van der Waals heterostructures composed of two-dimensional (2D) transition metal dichalcogenides (TMD) materials have stimulated tremendous research interest in various device applications, especially in energy-efficient future-generation electronics. Such ultra-thin stacks as tunnel junction theore...

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Detalles Bibliográficos
Autores principales: Wang, Jiaxin, Jia, Rundong, Huang, Qianqian, Pan, Chen, Zhu, Jiadi, Wang, Huimin, Chen, Cheng, Zhang, Yawen, Yang, Yuchao, Song, Haisheng, Miao, Feng, Huang, Ru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6288168/
https://www.ncbi.nlm.nih.gov/pubmed/30531791
http://dx.doi.org/10.1038/s41598-018-35661-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6288168/
https://www.ncbi.nlm.nih.gov/pubmed/30531791
http://dx.doi.org/10.1038/s41598-018-35661-4

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