Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Inefficient Mg-induced p-type doping has been remained a major obstacle in the development of GaN-based electronic devices for solid-state lighting and power applications. This study reports comparative structural analysis of defects in GaN layers on freestanding GaN substrates where Mg incorporatio...

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Detalles Bibliográficos
Autores principales: Kumar, Ashutosh, Mitsuishi, Kazutaka, Hara, Toru, Kimoto, Koji, Irokawa, Yoshihiro, Nabatame, Toshihide, Takashima, Shinya, Ueno, Katsunori, Edo, Masaharu, Koide, Yasuo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6289933/
https://www.ncbi.nlm.nih.gov/pubmed/30539346
http://dx.doi.org/10.1186/s11671-018-2804-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6289933/
https://www.ncbi.nlm.nih.gov/pubmed/30539346
http://dx.doi.org/10.1186/s11671-018-2804-y

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