Ultimate limit in size and performance of WSe(2) vertical diodes

Precise doping-profile engineering in van der Waals heterostructures is a key element to promote optimal device performance in various electrical and optical applications with two-dimensional layered materials. Here, we report tungsten diselenide- (WSe(2)) based pure vertical diodes with atomically...

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Detalles Bibliográficos
Autores principales: Nazir, Ghazanfar, Kim, Hakseong, Kim, Jihwan, Kim, Kyoung Soo, Shin, Dong Hoon, Khan, Muhammad Farooq, Lee, Dong Su, Hwang, Jun Yeon, Hwang, Chanyong, Suh, Junho, Eom, Jonghwa, Jung, Suyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6299081/
https://www.ncbi.nlm.nih.gov/pubmed/30560877
http://dx.doi.org/10.1038/s41467-018-07820-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6299081/
https://www.ncbi.nlm.nih.gov/pubmed/30560877
http://dx.doi.org/10.1038/s41467-018-07820-8

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