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Boosting the Thermoelectric Performance of Pseudo‐Layered Sb(2)Te(3)(GeTe)(n) via Vacancy Engineering
An ultrahigh figure of merit ZT value ≈2.4 at 773 K for p‐type pseudo‐layered Sb(2)Te(3)(GeTe)(17) along the parallel direction is reported by synergistically optimizing its electrical and thermal properties via vacancy engineering. The microstructural origin of thermoelectric property enhancement i...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6299710/ https://www.ncbi.nlm.nih.gov/pubmed/30581719 http://dx.doi.org/10.1002/advs.201801514 |