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Boosting the Thermoelectric Performance of Pseudo‐Layered Sb(2)Te(3)(GeTe)(n) via Vacancy Engineering

An ultrahigh figure of merit ZT value ≈2.4 at 773 K for p‐type pseudo‐layered Sb(2)Te(3)(GeTe)(17) along the parallel direction is reported by synergistically optimizing its electrical and thermal properties via vacancy engineering. The microstructural origin of thermoelectric property enhancement i...

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Detalles Bibliográficos
Autores principales:	Xu, Xiao, Xie, Lin, Lou, Qing, Wu, Di, He, Jiaqing
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	John Wiley and Sons Inc. 2018
Materias:	Communications
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6299710/ https://www.ncbi.nlm.nih.gov/pubmed/30581719 http://dx.doi.org/10.1002/advs.201801514

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