GeV(n) complexes for silicon-based room-temperature single-atom nanoelectronics

We propose germanium-vacancy complexes (GeV(n)) as a viable ingredient to exploit single-atom quantum effects in silicon devices at room temperature. Our predictions, motivated by the high controllability of the location of the defect via accurate single-atom implantation techniques, are based on ab...

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Detalles Bibliográficos
Autores principales: Achilli, Simona, Manini, Nicola, Onida, Giovanni, Shinada, Takahiro, Tanii, Takashi, Prati, Enrico
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6303345/
https://www.ncbi.nlm.nih.gov/pubmed/30575772
http://dx.doi.org/10.1038/s41598-018-36441-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6303345/
https://www.ncbi.nlm.nih.gov/pubmed/30575772
http://dx.doi.org/10.1038/s41598-018-36441-w

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