Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga(2)O(3) ([Formula: see text] ) Heterojunctions

The energy band alignment of ZnO/β-Ga(2)O(3) ([Formula: see text] ) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga(2)O(3) hetero...

Descripción completa

Detalles Bibliográficos
Autores principales: Sun, Shun-Ming, Liu, Wen-Jun, Xiao, Yi-Fan, Huan, Ya-Wei, Liu, Hao, Ding, Shi-Jin, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6305258/
https://www.ncbi.nlm.nih.gov/pubmed/30584649
http://dx.doi.org/10.1186/s11671-018-2832-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6305258/
https://www.ncbi.nlm.nih.gov/pubmed/30584649
http://dx.doi.org/10.1186/s11671-018-2832-7

Ejemplares similares