Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga(2)O(3) ([Formula: see text] ) Heterojunctions

The energy band alignment of ZnO/β-Ga(2)O(3) ([Formula: see text] ) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga(2)O(3) hetero...

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Detalles Bibliográficos
Autores principales: Sun, Shun-Ming, Liu, Wen-Jun, Xiao, Yi-Fan, Huan, Ya-Wei, Liu, Hao, Ding, Shi-Jin, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6305258/
https://www.ncbi.nlm.nih.gov/pubmed/30584649
http://dx.doi.org/10.1186/s11671-018-2832-7
Descripción
Sumario:The energy band alignment of ZnO/β-Ga(2)O(3) ([Formula: see text] ) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga(2)O(3) heterojunctions. The conduction (valence) band offset varied from 1.26 (0.20) eV to 1.47 (0.01) eV with the growth temperature increasing from 150 to 250 °C. The increased conduction band offset with temperature is mainly contributed by Zn interstitials in ZnO film. In the meanwhile, the acceptor-type complex defect V(zn) + OH could account for the reduced valence band offset. These findings will facilitate the design and physical analysis of ZnO/β-Ga(2)O(3) relevant electronic devices.

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