Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga(2)O(3) ([Formula: see text] ) Heterojunctions

The energy band alignment of ZnO/β-Ga(2)O(3) ([Formula: see text] ) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga(2)O(3) hetero...

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Autores principales: Sun, Shun-Ming, Liu, Wen-Jun, Xiao, Yi-Fan, Huan, Ya-Wei, Liu, Hao, Ding, Shi-Jin, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6305258/
https://www.ncbi.nlm.nih.gov/pubmed/30584649
http://dx.doi.org/10.1186/s11671-018-2832-7
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author Sun, Shun-Ming
Liu, Wen-Jun
Xiao, Yi-Fan
Huan, Ya-Wei
Liu, Hao
Ding, Shi-Jin
Zhang, David Wei
author_facet Sun, Shun-Ming
Liu, Wen-Jun
Xiao, Yi-Fan
Huan, Ya-Wei
Liu, Hao
Ding, Shi-Jin
Zhang, David Wei
author_sort Sun, Shun-Ming
collection PubMed
description The energy band alignment of ZnO/β-Ga(2)O(3) ([Formula: see text] ) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga(2)O(3) heterojunctions. The conduction (valence) band offset varied from 1.26 (0.20) eV to 1.47 (0.01) eV with the growth temperature increasing from 150 to 250 °C. The increased conduction band offset with temperature is mainly contributed by Zn interstitials in ZnO film. In the meanwhile, the acceptor-type complex defect V(zn) + OH could account for the reduced valence band offset. These findings will facilitate the design and physical analysis of ZnO/β-Ga(2)O(3) relevant electronic devices.
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spelling pubmed-63052582019-01-04 Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga(2)O(3) ([Formula: see text] ) Heterojunctions Sun, Shun-Ming Liu, Wen-Jun Xiao, Yi-Fan Huan, Ya-Wei Liu, Hao Ding, Shi-Jin Zhang, David Wei Nanoscale Res Lett Nano Express The energy band alignment of ZnO/β-Ga(2)O(3) ([Formula: see text] ) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga(2)O(3) heterojunctions. The conduction (valence) band offset varied from 1.26 (0.20) eV to 1.47 (0.01) eV with the growth temperature increasing from 150 to 250 °C. The increased conduction band offset with temperature is mainly contributed by Zn interstitials in ZnO film. In the meanwhile, the acceptor-type complex defect V(zn) + OH could account for the reduced valence band offset. These findings will facilitate the design and physical analysis of ZnO/β-Ga(2)O(3) relevant electronic devices. Springer US 2018-12-24 /pmc/articles/PMC6305258/ /pubmed/30584649 http://dx.doi.org/10.1186/s11671-018-2832-7 Text en © The Author(s). 2018 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Sun, Shun-Ming
Liu, Wen-Jun
Xiao, Yi-Fan
Huan, Ya-Wei
Liu, Hao
Ding, Shi-Jin
Zhang, David Wei
Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga(2)O(3) ([Formula: see text] ) Heterojunctions
title Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga(2)O(3) ([Formula: see text] ) Heterojunctions
title_full Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga(2)O(3) ([Formula: see text] ) Heterojunctions
title_fullStr Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga(2)O(3) ([Formula: see text] ) Heterojunctions
title_full_unstemmed Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga(2)O(3) ([Formula: see text] ) Heterojunctions
title_short Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga(2)O(3) ([Formula: see text] ) Heterojunctions
title_sort investigation of energy band at atomic-layer-deposited zno/β-ga(2)o(3) ([formula: see text] ) heterojunctions
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6305258/
https://www.ncbi.nlm.nih.gov/pubmed/30584649
http://dx.doi.org/10.1186/s11671-018-2832-7
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