Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH

III–V nanowires (NWs) possess great potential for use in future semiconductor technology. Alloying with dilute amounts of nitrogen provides further flexibility in tuning their material properties. In this study, we report on successful in situ nitrogen incorporation into GaP(N) NWs during growth via...

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Detalles Bibliográficos
Autores principales: Steidl, Matthias, Wu, Mingjian, Peh, Katharina, Kleinschmidt, Peter, Spiecker, Erdmann, Hannappel, Thomas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6311168/
https://www.ncbi.nlm.nih.gov/pubmed/30594986
http://dx.doi.org/10.1186/s11671-018-2833-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6311168/
https://www.ncbi.nlm.nih.gov/pubmed/30594986
http://dx.doi.org/10.1186/s11671-018-2833-6

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