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Interfacial Contact is Required for Metal-Assisted Plasma Etching of Silicon
For decades, fabrication of semiconductor devices has utilized well-established etching techniques to create complex nanostructures in silicon. The most common dry process is reactive ion etching which fabricates nanostructures through the selective removal of unmasked silicon. Generalized enhanceme...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6314446/ https://www.ncbi.nlm.nih.gov/pubmed/30613462 http://dx.doi.org/10.1002/admi.201800836 |