3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance

In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is proposed. The novel layout can be radiation-hardened with a fixed charge density at the shallow trench isolation (ST...

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Detalles Bibliográficos
Autores principales: Wang, Ying, Shan, Chan, Piao, Wei, Li, Xing-ji, Yang, Jian-qun, Cao, Fei, Yu, Cheng-hao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6315489/
https://www.ncbi.nlm.nih.gov/pubmed/30558147
http://dx.doi.org/10.3390/mi9120659

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6315489/
https://www.ncbi.nlm.nih.gov/pubmed/30558147
http://dx.doi.org/10.3390/mi9120659

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