Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices

Temperature-dependent threshold voltage (V(th)) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing a repeated high-temperature operation condition. The V(th) analytical model and its stability are dependent on high-tempe...

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Detalles Bibliográficos
Autores principales: Huang, Huolin, Li, Feiyu, Sun, Zhonghao, Cao, Yaqing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6315632/
https://www.ncbi.nlm.nih.gov/pubmed/30558127
http://dx.doi.org/10.3390/mi9120658

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6315632/
https://www.ncbi.nlm.nih.gov/pubmed/30558127
http://dx.doi.org/10.3390/mi9120658

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