Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN cr...

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Detalles Bibliográficos
Autores principales: Hsu, Wen-Yang, Lian, Yuan-Chi, Wu, Pei-Yu, Yong, Wei-Min, Sheu, Jinn-Kong, Lin, Kun-Lin, Wu, YewChung Sermon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6315876/
https://www.ncbi.nlm.nih.gov/pubmed/30486267
http://dx.doi.org/10.3390/mi9120622

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6315876/
https://www.ncbi.nlm.nih.gov/pubmed/30486267
http://dx.doi.org/10.3390/mi9120622

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