Cargando…

Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN cr...

Descripción completa

Detalles Bibliográficos
Autores principales: Hsu, Wen-Yang, Lian, Yuan-Chi, Wu, Pei-Yu, Yong, Wei-Min, Sheu, Jinn-Kong, Lin, Kun-Lin, Wu, YewChung Sermon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6315876/
https://www.ncbi.nlm.nih.gov/pubmed/30486267
http://dx.doi.org/10.3390/mi9120622
_version_ 1783384398197948416
author Hsu, Wen-Yang
Lian, Yuan-Chi
Wu, Pei-Yu
Yong, Wei-Min
Sheu, Jinn-Kong
Lin, Kun-Lin
Wu, YewChung Sermon
author_facet Hsu, Wen-Yang
Lian, Yuan-Chi
Wu, Pei-Yu
Yong, Wei-Min
Sheu, Jinn-Kong
Lin, Kun-Lin
Wu, YewChung Sermon
author_sort Hsu, Wen-Yang
collection PubMed
description Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.
format Online
Article
Text
id pubmed-6315876
institution National Center for Biotechnology Information
language English
publishDate 2018
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-63158762019-01-10 Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant Hsu, Wen-Yang Lian, Yuan-Chi Wu, Pei-Yu Yong, Wei-Min Sheu, Jinn-Kong Lin, Kun-Lin Wu, YewChung Sermon Micromachines (Basel) Article Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface. MDPI 2018-11-26 /pmc/articles/PMC6315876/ /pubmed/30486267 http://dx.doi.org/10.3390/mi9120622 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Hsu, Wen-Yang
Lian, Yuan-Chi
Wu, Pei-Yu
Yong, Wei-Min
Sheu, Jinn-Kong
Lin, Kun-Lin
Wu, YewChung Sermon
Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant
title Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant
title_full Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant
title_fullStr Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant
title_full_unstemmed Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant
title_short Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant
title_sort suppressing the initial growth of sidewall gan by modifying micron-sized patterned sapphire substrate with h(3)po(4)-based etchant
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6315876/
https://www.ncbi.nlm.nih.gov/pubmed/30486267
http://dx.doi.org/10.3390/mi9120622
work_keys_str_mv AT hsuwenyang suppressingtheinitialgrowthofsidewallganbymodifyingmicronsizedpatternedsapphiresubstratewithh3po4basedetchant
AT lianyuanchi suppressingtheinitialgrowthofsidewallganbymodifyingmicronsizedpatternedsapphiresubstratewithh3po4basedetchant
AT wupeiyu suppressingtheinitialgrowthofsidewallganbymodifyingmicronsizedpatternedsapphiresubstratewithh3po4basedetchant
AT yongweimin suppressingtheinitialgrowthofsidewallganbymodifyingmicronsizedpatternedsapphiresubstratewithh3po4basedetchant
AT sheujinnkong suppressingtheinitialgrowthofsidewallganbymodifyingmicronsizedpatternedsapphiresubstratewithh3po4basedetchant
AT linkunlin suppressingtheinitialgrowthofsidewallganbymodifyingmicronsizedpatternedsapphiresubstratewithh3po4basedetchant
AT wuyewchungsermon suppressingtheinitialgrowthofsidewallganbymodifyingmicronsizedpatternedsapphiresubstratewithh3po4basedetchant