Cargando…
Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant
Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN cr...
Autores principales: | , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6315876/ https://www.ncbi.nlm.nih.gov/pubmed/30486267 http://dx.doi.org/10.3390/mi9120622 |
_version_ | 1783384398197948416 |
---|---|
author | Hsu, Wen-Yang Lian, Yuan-Chi Wu, Pei-Yu Yong, Wei-Min Sheu, Jinn-Kong Lin, Kun-Lin Wu, YewChung Sermon |
author_facet | Hsu, Wen-Yang Lian, Yuan-Chi Wu, Pei-Yu Yong, Wei-Min Sheu, Jinn-Kong Lin, Kun-Lin Wu, YewChung Sermon |
author_sort | Hsu, Wen-Yang |
collection | PubMed |
description | Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface. |
format | Online Article Text |
id | pubmed-6315876 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-63158762019-01-10 Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant Hsu, Wen-Yang Lian, Yuan-Chi Wu, Pei-Yu Yong, Wei-Min Sheu, Jinn-Kong Lin, Kun-Lin Wu, YewChung Sermon Micromachines (Basel) Article Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface. MDPI 2018-11-26 /pmc/articles/PMC6315876/ /pubmed/30486267 http://dx.doi.org/10.3390/mi9120622 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Hsu, Wen-Yang Lian, Yuan-Chi Wu, Pei-Yu Yong, Wei-Min Sheu, Jinn-Kong Lin, Kun-Lin Wu, YewChung Sermon Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant |
title | Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant |
title_full | Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant |
title_fullStr | Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant |
title_full_unstemmed | Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant |
title_short | Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant |
title_sort | suppressing the initial growth of sidewall gan by modifying micron-sized patterned sapphire substrate with h(3)po(4)-based etchant |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6315876/ https://www.ncbi.nlm.nih.gov/pubmed/30486267 http://dx.doi.org/10.3390/mi9120622 |
work_keys_str_mv | AT hsuwenyang suppressingtheinitialgrowthofsidewallganbymodifyingmicronsizedpatternedsapphiresubstratewithh3po4basedetchant AT lianyuanchi suppressingtheinitialgrowthofsidewallganbymodifyingmicronsizedpatternedsapphiresubstratewithh3po4basedetchant AT wupeiyu suppressingtheinitialgrowthofsidewallganbymodifyingmicronsizedpatternedsapphiresubstratewithh3po4basedetchant AT yongweimin suppressingtheinitialgrowthofsidewallganbymodifyingmicronsizedpatternedsapphiresubstratewithh3po4basedetchant AT sheujinnkong suppressingtheinitialgrowthofsidewallganbymodifyingmicronsizedpatternedsapphiresubstratewithh3po4basedetchant AT linkunlin suppressingtheinitialgrowthofsidewallganbymodifyingmicronsizedpatternedsapphiresubstratewithh3po4basedetchant AT wuyewchungsermon suppressingtheinitialgrowthofsidewallganbymodifyingmicronsizedpatternedsapphiresubstratewithh3po4basedetchant |