Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy

Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga–Sb mixture using solid-phase epitaxy at temperatures of 200–500 °C. Use of the solid-phase epitaxy method allowed the suppression of Ga surface diffusion and prevention of intense Sb desorption. At the annealing temperature...

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Detalles Bibliográficos
Autores principales: Chusovitin, Evgeniy, Dotsenko, Sergey, Chusovitina, Svetlana, Goroshko, Dmitry, Gutakovskii, Anton, Subbotin, Evgeniy, Galkin, Konstantin, Galkin, Nikolay
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316036/
https://www.ncbi.nlm.nih.gov/pubmed/30487412
http://dx.doi.org/10.3390/nano8120987

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316036/
https://www.ncbi.nlm.nih.gov/pubmed/30487412
http://dx.doi.org/10.3390/nano8120987

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