Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET

Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology. In addition, silicon-germanium (SiGe) engineering is shown to improve the performance of TFET-based ESD protection devices. In this paper, a ne...

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Detalles Bibliográficos
Autores principales: Yang, Zhaonian, Yang, Yuan, Yu, Ningmei, Liou, Juin J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316336/
https://www.ncbi.nlm.nih.gov/pubmed/30545073
http://dx.doi.org/10.3390/mi9120657

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316336/
https://www.ncbi.nlm.nih.gov/pubmed/30545073
http://dx.doi.org/10.3390/mi9120657

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