Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes

We demonstrated two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with distributed Bragg reflector (DBR) and without DBR to investigate the effect of dielectric TiO(2)/SiO(2) DBR on optical and electrical characteristics of FCLEDs. The reflector consisting of two single TiO(2)/SiO(2) D...

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Detalles Bibliográficos
Autores principales: Zhou, Shengjun, Xu, Haohao, Liu, Mengling, Liu, Xingtong, Zhao, Jie, Li, Ning, Liu, Sheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316428/
https://www.ncbi.nlm.nih.gov/pubmed/30544773
http://dx.doi.org/10.3390/mi9120650

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316428/
https://www.ncbi.nlm.nih.gov/pubmed/30544773
http://dx.doi.org/10.3390/mi9120650

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