Cargando…

Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes

We demonstrated two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with distributed Bragg reflector (DBR) and without DBR to investigate the effect of dielectric TiO(2)/SiO(2) DBR on optical and electrical characteristics of FCLEDs. The reflector consisting of two single TiO(2)/SiO(2) D...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zhou, Shengjun, Xu, Haohao, Liu, Mengling, Liu, Xingtong, Zhao, Jie, Li, Ning, Liu, Sheng
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316428/ https://www.ncbi.nlm.nih.gov/pubmed/30544773 http://dx.doi.org/10.3390/mi9120650

Ejemplares similares

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors
por: Shiu, Guo-Yi, et al.
Publicado: (2016)

Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors
por: Kim, Tae Kyoung, et al.
Publicado: (2022)

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
por: Fan, Feng-Hsu, et al.
Publicado: (2017)

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes
por: Hu, Hongpo, et al.
Publicado: (2017)

Anisotropic properties of pipe-GaN distributed Bragg reflectors
por: Wu, Chia-Jung, et al.
Publicado: (2020)

The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
por: Zhou, Shengjun, et al.
Publicado: (2018)

Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance
por: Tian, Ye, et al.
Publicado: (2022)

Narrow Linewidth Distributed Bragg Reflectors Based on InGaN/GaN Laser
por: Xie, Wuze, et al.
Publicado: (2019)

High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate
por: Zhao, Qiang, et al.
Publicado: (2019)

Ultraviolet-C AlGaN Resonant-Cavity Light-Emitting Diodes with Thermal Stability Pipe-AlGaN-Distributed Bragg Reflectors
por: Chen, Kuei-Ting, et al.
Publicado: (2023)

Comprehensive Investigation of Electrical and Optical Characteristics of InGaN-Based Flip-Chip Micro-Light-Emitting Diodes
por: Lee, Chang-Cheng, et al.
Publicado: (2022)

Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification
por: Zhu, Tongtong, et al.
Publicado: (2017)

An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits
por: Liu, Mengling, et al.
Publicado: (2018)

Light-Output Enhancement of GaN-Based Light-Emitting Diodes with Three-Dimensional Backside Reflectors Patterned by Microscale Cone Array
por: Huang, Huamao, et al.
Publicado: (2014)

All-nitride Al(x)Ga(1−x)N:Mn/GaN distributed Bragg reflectors for the near-infrared
por: Capuzzo, Giulia, et al.
Publicado: (2017)

Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology
por: Li, Ying-Chang, et al.
Publicado: (2017)

Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes
por: Wan, Hui, et al.
Publicado: (2019)

Flexible top-emitting organic light emitting diodes with a functional dielectric reflector on a metal foil substrate
por: Hong, Kihyon, et al.
Publicado: (2018)

Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP
por: Yan, Lei, et al.
Publicado: (2023)

Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure
por: Zhao, Xiaoyu, et al.
Publicado: (2021)

Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer
por: Hu, Hongpo, et al.
Publicado: (2019)

GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si
por: Chen, Wen, et al.
Publicado: (2021)

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015)

Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors
por: Griffin, Peter, et al.
Publicado: (2018)

Transmission comb of a distributed Bragg reflector with two surface dielectric gratings
por: Zhao, Xiaobo, et al.
Publicado: (2016)

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
por: Hu, Xiao-Long, et al.
Publicado: (2015)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Hybrid Device of Blue GaN Light-Emitting Diodes and Organic Light-Emitting Diodes with Color Tunability for Smart Lighting Sources
por: Weng, Yalian, et al.
Publicado: (2022)

Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
por: Piprek, Joachim
Publicado: (2020)

Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes
por: Nee, Tzer-En, et al.
Publicado: (2021)

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
por: Li, Jianfei, et al.
Publicado: (2021)

Enhanced performance of photonic crystal GaN light-emitting diodes with graphene transparent electrodes
por: Ge, Hai-Liang, et al.
Publicado: (2015)

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes
por: Hsu, Kai-Chiang, et al.
Publicado: (2015)

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
por: Robin, Y., et al.
Publicado: (2018)

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
por: Park, Ah Hyun, et al.
Publicado: (2022)

Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes
por: Fragkos, Ioannis E., et al.
Publicado: (2017)

Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes
por: Chen, Shuo-Wei, et al.
Publicado: (2017)

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer
por: Hong, Kuo-Bin, et al.
Publicado: (2023)

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
por: Zheng, Changda, et al.
Publicado: (2013)

Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection
por: Zheng, Jinjian, et al.
Publicado: (2015)

Cannot write session to /tmp/vufind_sessions/sess_bg6qr0vn3lier49lij6qhgl8ne