Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO(2) Interlayer

Bendable single crystal silicon nanomembrane thin film transistors (SiNMs TFTs), employing a simple method which can improve the metal/n-Silicon (Si) contact characteristics by inserting the titanium dioxide (TiO(2)) interlayer deposited by atomic layer deposition (ALD) at a low temperature (90 °C),...

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Detalles Bibliográficos
Autores principales: Zhang, Jiaqi, Zhang, Yi, Chen, Dazheng, Zhu, Weidong, Xi, He, Zhang, Jincheng, Zhang, Chunfu, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316488/
https://www.ncbi.nlm.nih.gov/pubmed/30558367
http://dx.doi.org/10.3390/nano8121060

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316488/
https://www.ncbi.nlm.nih.gov/pubmed/30558367
http://dx.doi.org/10.3390/nano8121060

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