Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells

In this paper, we present a Ku-band 50 W internally-matched power amplifier that asymmetrically combines the power transistor cells of the GaN high electron mobility transistor (HEMT) (CGHV1J070D) from Wolfspeed. The amplifier is designed using a large-signal transistor cell model in the foundry pro...

Descripción completa

Detalles Bibliográficos
Autores principales: Kim, Seil, Lee, Min-Pyo, Hong, Sung-June, Kim, Dong-Wook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316699/
https://www.ncbi.nlm.nih.gov/pubmed/30477207
http://dx.doi.org/10.3390/mi9120619

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316699/
https://www.ncbi.nlm.nih.gov/pubmed/30477207
http://dx.doi.org/10.3390/mi9120619

Ejemplares similares